| 摘要 |
There is disclosed an electro optical device comprising a single body of semi insulating semiconductor material having a semi insulating semiconductivity of approximately 108 ohm-centimeters, preferably gallium arsenide. Gallium arsenide in this conductivity range exhibits a photo conductivity characteristic in which there is a relatively linear variance of resistivity with impinging photons. A PN junction is formed in one portion of the substrate and, responsive to electric signals applied across the junction, emits photons affecting the resistivity of the semi insulating layer. Contact to the photo resistive layer can be connected in a circuit as either a switch or a variable resistor, depending upon the level of signals applied across the PN junction.
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