| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reproductively processed peeled off-wafer which is reused many times as a wafer for an SOI layer for manufacturing an SOI wafer having an improved yield, wherein the occurrence of HF defects is suppressed, by reproductively processing the peeled-off wafer formed as a by-product in an ion implanting peeling method to extinguish the oxygen deposition nucleus or oxygen deposit. <P>SOLUTION: In this reproductive processing method the peeled off wafer 11b, obtained as the by-product when the laminated SOI wafer 10 is manufactured by the ion implanting method, is subjected to the reproductive processing and bonded, and is reused as the wafer 11 for the SOI layer of the SOI wafer 10. This method comprises the steps of carrying out quick cooling, after the quick heating of the peeled-off wafer 11b in an oxidizing atmosphere containing oxygen and a fixed time for holding it subsequently, and carrying out the mirror polishing of the surface of the peeled-off wafer 11b. <P>COPYRIGHT: (C)2007,JPO&INPIT |
