发明名称 MANUFACTURING METHOD OF THERMAL INFRARED DETECTING ELEMENT, AND MANUFACTURING METHOD OF ARRAY ELEMENTS
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method capable of stably manufacturing thermal infrared detecting elements and array elements, even for a structure that is simpler than those of prior art. <P>SOLUTION: When a concave portion 8 is formed in a substrate 7 by an etching gas, it is necessary that an etching stopper be formed in the substrate 7, because etching of silicon is performed isotropally. In the present invention, however, since wet crystalline anisotropy treatment is performed, etching stoppers become unnecessary. Moreover, by adding a fixing member for supporting an infrared absorber 2 prior to the treatment, possible sticking during the drying period after the wet treatment can be prevented. Finally, the fixing member added is removed by dry processing. Accordingly, thermal infrared detecting elements 1 can be manufactured stably. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007147573(A) 申请公布日期 2007.06.14
申请号 JP20050346202 申请日期 2005.11.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKAGI YOSHIYUKI;HATA HISATOSHI
分类号 G01J1/02;G01J5/02;H01L27/14;H01L31/08;H01L35/00;H01L35/34 主分类号 G01J1/02
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