| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which gives no influence on the operation of a thin-film transistor using oxide semiconductor and can keep a numerical aperture high as a merit of a transparent oxide semiconductor. SOLUTION: The thin-film transistor is provided with a semiconductor active layer made of oxide, a gate electrode, a source electrode, a drain electrode, and a gate insulating film arranged between the gate electrode and the semiconductor active layer, on a transparent substrate. In this case, the transmission of at least the substrate is made to be 10% or less to a light with shorter wavelength than a band gap energy wavelength of the semiconductor active layer. COPYRIGHT: (C)2007,JPO&INPIT
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