| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a non-volatile storage device capable of forming a memory element with a stable characteristic by a simple method even when a memory cell is finely divided. SOLUTION: A charge trap layer 3 is formed on a substrate 1, and then, a bit line work mask 22 is formed where a region is opened with an embedded bit line formed therein. A series of processes is performed by using the bit line work mask 22, i.e., the removal of the charge trap layer 3 exposed in the opening, the formation of a bit line insulating film 10 on a substrate surface with the charge trap layer 3 removed therefrom, and the formation of the embedded bit line 5 by ion implantation to the substrate 1 via the bit line insulating film 10. Then, the bit line work mask 22 is removed, a word line 7 composed of a gate electrode is formed on the charge trap layer 3 and the bit line insulating film 10, and the memory cell is established. COPYRIGHT: (C)2007,JPO&INPIT
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