| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which can achieve normally-off operation while suppressing an increase in on-state resistance. SOLUTION: By using a conductive oxide having a larger work function compared with Ni, etc. conventionally used for the material of a gate electrode 107, a normally-off transistor can be obtained without decreasing sheet carrier density in a hetero junction portion. Consequently, the normally-off operation can be achieved while suppressing an increase in the on-state resistance. COPYRIGHT: (C)2007,JPO&INPIT
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