| 摘要 |
A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si-C bonds per Si atom. The second organosilicon compound has an average number of Si-C bonds per Si atom that is greater than the average number of Si-C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.
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