| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the current supply capacity of a cell transistor in a semiconductor storage device holding information by the presence or the absence of current that flows in the cell transistor and the size of current flowing in the cell transistor. <P>SOLUTION: The semiconductor storage device is provided with a plurality of active regions 10 and fish-bone like gate electrodes 20 arranged on the respective active regions 10. A plurality of source regions 11 and a plurality of drain regions 12 are disposed in the active regions 10 in a matrix form. The source regions 11 are connected to a source line 31 in common via a contact plug 41. The drain regions 12 are connected to lower electrodes 61 of different memory elements. Since the three cell transistors can be allocated to a single memory element which are connected in parallel, effective gate width is increased. <P>COPYRIGHT: (C)2007,JPO&INPIT |
