| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a planarization processing method of effectively planarizing a wafer by improving SFQRmax that is one of indexes of planarization. <P>SOLUTION: A planarization processing method of a semiconductor wafer implements a mirror surface polishing process, a surface shape measuring process, and a local dry etching process in this order. In the mirror finishing process, relative rotation is imparted to a platen on which abrasive cloth is stuck and to a holding tool, and the semiconductor wafer is subject to mirror finishing processing while supplying a polishing composition. In the surface shape measuring process, the surface shape of the semiconductor wafer is measured after the mirror finishing process. In the local dry etching process, neutral active species gas has been changed to electrically neutral in the course of flowing down from a plasma producer, and is blown off to the surface of a workpiece through a relatively movable nozzle. Materials are removed from the surface while controlling at least one among a relative speed, a distance between the workpiece and the nozzle, plasma output of the plasma producer, and gas flow rates in response to the measured surface shape. <P>COPYRIGHT: (C)2007,JPO&INPIT |
