NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which can form one electrode on the rear surface of a substrate while forming a vertical light emitting element by using an SiC substrate as the substrate, and can increase external quantum efficiency by effectively utilizing also light advancing toward a substrate side.

SOLUTION: A nitride semiconductor laminate 9 including an active layer 5 formed therein with at least a light emitter is provided on an SiC substrate 1, and a pair of upper and lower electrodes 11 and 12 are provided on the rear surface of the SiC substrate 1 and on the front surface of the semiconductor laminate 9, respectively. The active layer 5 has a laminated structure of a high refractive-index layer 51 and a low refractive-index layer 52 each having a thickness of λ/(4n) and stacked on each other, where λ denotes the wavelength of emitted light, n denotes the refractive index of the semiconductor layer (n1being the refractive index of the high refractive-index layer, n2being the refractive index of the low refractive-index layer).

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