| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly efficient and inexpensive semiconductor light emitting element in which mechanical strength can be ensured sufficiently. <P>SOLUTION: The semiconductor light emitting element comprising a compound semiconductor layer including a light emitting layer where at least an n-type clad layer 3, an active layer 4, and a p-type clad layer 5 are formed sequentially on the first major surface of an n-type GaAs substrate 1, an upper electrode 7 formed partially on the first major surface of the compound semiconductor layer, and a lower electrode 8 formed on the second major surface side of the light absorbing semiconductor substrate further has a p-type thyristor layer 2 formed beneath the upper electrode 7 between the n-type GaAs substrate 1 and the light emitting layer, a metal layer 10 formed excepting a portion beneath the upper electrode 7 on the second major surface side of the n-type clad layer 3, and an ohmic contact portion 9 formed excepting the portion beneath the upper electrode 7 on the second major surface side of the n-type clad layer 3. <P>COPYRIGHT: (C)2007,JPO&INPIT |
