| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of providing an increased light output power and also a method of fabricating the light-emitting device. <P>SOLUTION: The semiconductor light-emitting device fabricated in a nitride material system has an active region 7 for light emission that includes a plurality of quantum well layers (12/14/16), which are each provided to be separated from a neighboring quantum well layer through the interposition of a barrier layer (13/15), wherein each barrier layer (13/15) is formed at least 13 times as thick as each of the quantum well layers (12/14/16). <P>COPYRIGHT: (C)2007,JPO&INPIT |
