| 摘要 |
<P>PROBLEM TO BE SOLVED: To further improve light extraction efficiency by deeply engraving a reflecting mirror when improving the light extraction efficiency by engraving up to an nGaN layer so as to form the reflecting mirror, in a semiconductor light-emitting element composed by laminating at least the nGaN layer, a light-emitting layer, and a pGaN layer. <P>SOLUTION: A groove 19 as the reflecting mirror is arranged dispersedly in a plane direction of a substrate 12 so as not to make it into a closed loop. Accordingly, it is possible to secure a current pathway from one end side with an n-type electrode 17 formed thereto to the other end side in the nGaN layer while preventing the nGaN layer, light-emitting layer, and pGaN layer from being separated from each other in the plane direction (in a state of not being separated in a columnar shape). The groove 19 can be deeply engraved, namely, the reflecting mirror can be made high while being in a low-resistance state. By this, it is possible to improve the light extraction efficiency while increasing components hitting the reflecting mirror. <P>COPYRIGHT: (C)2007,JPO&INPIT |
