PATTERNING METHOD AND ORIGINAL MASK FOR PROXIMITY EXPOSURE TO BE USED FOR THE METHOD, AND COLOR FILTER SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a line pattern from an original mask by a proximity exposure method in which the width of a line pattern in a black matrix or black stripes can be decreased to around a 6 μm line width by a PB (post baking) processing.

SOLUTION: A negative photosensitive material is exposed by a proximity exposure method using an original mask, subjected to a predetermined developing processing and if necessary, subjected to a post processing (PB processing) to form a line pattern, wherein the original mask has a line pattern forming region where a light shielding auxiliary pattern is disposed in a linear aperture, the auxiliary pattern narrower than the aperture width and not resolved after the development, so as to form a line pattern having a width smaller than the width of the linear opening after the development.

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