| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride LED element having a vertical structure for increasing light-emitting efficiency and maximizing the effect of improving external quantum efficiency, by forming surface unevenness which is a fine light scattering structure on a surface of an n-type gallium nitride layer on the light-emitting side and a p-type gallium nitride layer on the reflection side. <P>SOLUTION: The gallium nitride LED element comprises an n-type electrode 106, an n-type gallium nitride layer 102 formed on the underside of the n-type electrode, an active layer 103 formed on the underside of the n-type gallium nitride layer, a p-type gallium nitride layer 104 which is formed on the underside of the active layer and has a first surface uneven structure 300b having a predetermined shape on a surface not in contact with the active layer, a p-type reflecting electrode 107 formed on the underside of the p-type gallium nitride layer having the first surface uneven structure, and a structure supporting layer formed on the underside of the p-type reflecting electrode. The n-type gallium nitride layer may have a second surface uneven structure 300a formed to have a predetermined shape on a side coming into contact with the n-type electrode 106. <P>COPYRIGHT: (C)2007,JPO&INPIT |
