| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element for improving an internal quantum efficiency while suppressing a leak current and a non-emission recombination center and for improving luminous characteristics by providing a pit formation layer, where pits are generated reliably while maintaining a film quality appropriately, on the lower layer of an active layer. <P>SOLUTION: The nitride semiconductor light-emitting element comprises a substrate 1 and an active layer 5 where at least an emission section is formed. A superlattice layer in a nitride semiconductor is formed at the side of the substrate 1 in the active layer 5. A pit formation layer 4 for generating pits is provided at the edge of through dislocation generated on the nitride semiconductor layer at the side of the substrate 1. <P>COPYRIGHT: (C)2007,JPO&INPIT |
