摘要 |
A pertubative approach based on the Born approximation resolves weakly nonlinear circuit models without requiring explicit high-order device derivatives. Convergence properties and the relation to Volterra series are discussed. According to the disclosed methods, second and third order intermodulation products (IM2, IM3) and intercept points (IP2, IP3) can be calculated by second and third order Born approximations under weakly nonlinear conditions. A diagrammatic representation of nonlinear interactions is presented. Using this diagrammatic technique, both Volterra series and Born approximations can be constructed in a systematic way. The method is generalized to calculate other high-order nonlinear effects such as IMn (nth order intermodulation product) and IPn (nth order intermodulation intercept point). In general, the equations are developed in harmonic form and can be implemented in both time and frequency domains for analog and RF circuits.
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