| 摘要 |
<p>An organic thin film transistor and a method for manufacturing the same are provided to prevent undercut phenomenon during a wet etching process, damage of source and drain electrodes during a laser patterning process, and wire deterioration in the organic thin film transistor by using a self-assembly monolayer. An organic thin film transistor(10) includes a substrate(11), a gate electrode(12), source and drain electrodes(14a,14b) insulated from the gate electrode, an organic semiconductor layer(15), and a dielectric layer(13). The organic semiconductor layer is insulated from the gate electrode and electrically coupled with the source and the drain electrodes. The dielectric layer causes the gate electrode to be insulated from both the source and the drain electrodes and the organic semiconductor layer. A SAM(Self-Assembly Monolayer) is inserted between the substrate and the source and the drain electrodes, or between the dielectric layer and the source and the drain electrodes to increase an adhesive strength.</p> |
