| 摘要 |
A nitride semiconductor laser element and a fabrication method thereof are provided to prevent inflow of non-uniform current by preventing a P-type electrode from being stripped from a nitride semiconductor layer. A nitride semiconductor laser element includes a substrate(11), a nitride semiconductor stacking unit(20), an insulation layer(15), a first electrode(16), a cavity cross section(14), and an end portion electrode protection layer(18). A plurality of nitride semiconductor layers are sequentially stacked on the substrate(11). A waveguide of a ridge stripe shape is provided to the nitride semiconductor stacking unit(20). The insulation film(15) is formed on the nitride semiconductor stacking unit, and has an aperture on an upper part of the waveguide. The first electrode(16) is provided to an upper part of the waveguide and the insulation film(15). The cavity cross section(14) is vertical to a length direction of the waveguide. The end portion protection layer(18) has a cross section on the same plane with the cross section(14) of the cavity on an upper part of the first electrode(16).
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