发明名称 |
CMP POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE |
摘要 |
<p>The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.</p> |
申请公布号 |
EP1796152(A1) |
申请公布日期 |
2007.06.13 |
申请号 |
EP20050766424 |
申请日期 |
2005.07.20 |
申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
FUKASAWA, MASATO;KOYAMA, NAOYUKI;KURATA, YASUSHI;HAGA, KOUJI;AKUTSU, TOSHIAKI;OOTSUKI, YUUTO |
分类号 |
H01L21/3105;B24B37/00;C09G1/02;C09K3/14;H01L21/304 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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