A MIM CAPACITOR HAVING STEPPED BOTTOM ELECTRODE AND MANUFACTURING METHOD OF THE SAME

摘要

A MIM capacitor having a stepped bottom electrode and its manufacturing method are provided to secure stably capacitance by preventing attachment of a metal polymer on a dielectric layer and removing a strong field region. An interlayer dielectric(220) is formed on a semiconductor substrate(210). A lower electrode(230) is formed on the interlayer dielectric. A dielectric layer(240) is formed on the lower electrode. The dielectric layer has an area of the lower region which is wider than an upper area of the lower electrode. An upper electrode(250) is formed on the dielectric layer. The upper electrode has an area of the lower region which is narrower than an upper area of the dielectric layer. A lateral profile of the lower electrode has a stepped shape.