| 摘要 |
A fuse of a semiconductor device and a method for forming the same are provided to improve errors of a repair process due to non-uniformity of thickness of residual interlayer dielectrics on a fuse line after a repair etch process. A fuse of a semiconductor device includes a plurality of fuse lines(502,505), an insulating layer for covering the plurality of fuse lines, and a wiring(509) connected to both side ends of the fuse line on the insulating layer. The fuse lines are formed with three-dimensional stepped multilayer structure so that a gap between the fuse lines of the three-dimensional stepped multilayer structure is increased in comparison with a gap between the fuse lines formed on a single layer.
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