| 摘要 |
A method for forming a fuse of a semiconductor device is provided to improve a yield of the semiconductor device by preventing repair errors according to non-uniformity of IMD(Inter-Metal Dielectric) in thickness. An etch-stop nitride layer is formed on a fuse region of a semiconductor substrate(SUB) including an insulating layer as an oxide layer. A fuse line(FL) is formed on the etch-stop nitride layer. A first oxide layer(ILD1) as a first IMD is formed on the etch-stop nitride layer to cover the fuse line. A second oxide layer(ILD2) as a second IMD is formed on the first oxide layer. A third oxide layer as a first passivation layer(PS1) and a second passivation layer(PS2) are formed on the second oxide layer. A trench for exposing the fuse line is formed by etching the second passivation layer, the third oxide layer, the second oxide layer, and the first oxide layer. A capping insulating layer(CL) is formed on the trench and the second passivation layer.
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