METHOD OF VAPOR-PHASE GROWING, AND VAPOR-PHASE GROWING APPARATUS, FOR AlGaN

摘要

An epitaxial growing method in which a crystal of AlxGa1-xN wherein x is a desirable constituent ratio can be grown on an Si substrate or sapphire substrate according to the HVPE process. Crystal of AlxGal-xN is grown according to the HVPE process in which use is made of an aluminum material, a gallium material, an ammonia material and a carrier gas. The carrier gas consists of an inert gas and hydrogen, and the partial pressure of hydrogen is set so as to range from 0 to <0.1. As a result, the relationship between feeding ratio among materials and constituent ratio of grown crystal can be made linear, thereby enhancing the controllability of crystal composition.