发明名称 INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING.
摘要 <p>A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).</p>
申请公布号 MX2007003615(A) 申请公布日期 2007.06.13
申请号 MX20070003615 申请日期 2005.09.21
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 SIMON DODD;S. JONATHAN WANG;DENNIS W. TOM;FRANK R. BRYANT;TERRY E. MCMAHON;RICHARD TODD MILLER;GREGORY T. HINDMAN
分类号 H01L23/31 主分类号 H01L23/31
代理机构 代理人
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