| 摘要 |
A method for manufacturing a device including at least one single crystal layer formed on a substrate is provided to make deposited silicon atoms rearranged and homogenized by using a pulverization process. At least one single crystal layer is deposited on a single crystal substrate(10) by performing a pulverization process on metal or semiconductor of a plasma gas. The deposition rate of atoms is lower than the homogenization rate of the atoms. The pulverization process is performed by using a target. The target is polarized by using one selected from a group consisting of DC(Direct Current) type, pulsating DC, or the polarization of RF(Radio Frequency).
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