发明名称 Positive resist composition and pattern for forming method using the same
摘要 <p>A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (C) a resin having at least one repeating unit selected from fluorine atom-containing repeating units represented by the following formulae (1-1), (1-2) and (1-3), the resin being stable to an acid and insoluble in an alkali developer, and (D) a solvent: wherein R 1 represents a hydrogen atom or an alkyl group; R 2 represents a fluoroalkyl group; R 3 represents a hydrogen atom or a monovalent organic group; R 4 to R 7 each independently represents a hydrogen atom, a fluorine atom, an alkyl group, a fluoroalkyl group, an alkoxy group or a fluoroalkoxy group, provided that at least one of R 4 to R 7 represents a fluorine atom, and R 4 and R 5 , or R 6 and R 7 may combine to form a ring; R 8 represents a hydrogen atom, a fluorine atom or a monovalent organic group; Rf represents a fluorine atom or a fluorine atom-containing monovalent organic group; L represents a single bond or a divalent linking group; Q represents an alicyclic structure; and k represents an integer of 0 to 3.</p>
申请公布号 EP1795962(A2) 申请公布日期 2007.06.13
申请号 EP20060025355 申请日期 2006.12.07
申请人 FUJIFILM CORPORATION 发明人 YAMAMOTO, KEI;KANNA, SHINICHI;KANDA, HIROMI
分类号 G03F7/039;G03F7/004;G03F7/20 主分类号 G03F7/039
代理机构 代理人
主权项
地址