发明名称 SUBSTRATE PROCESSING METHOD FOR INCREASED SUBSTRATE THROUGHPUT
摘要 A substrate processing method is provided to restrain the deformation of a substrate by heating uniformly the substrate and to improve the production of substrate by heating quickly the substrate. A substrate is loaded into a process chamber under a loading/unloading pressure condition(S10). The pressure of the process chamber is changed into a base pressure(S14). The pressure of the process chamber is changed into a heating pressure and the substrate is transferred from a loading/unloading position to a substrate processing position. The substrate is heated up to a process temperature(S20). The pressure of the process chamber is changed into a substrate processing pressure(S22). A substrate processing process is performed on the substrate(S24).
申请公布号 KR20070060575(A) 申请公布日期 2007.06.13
申请号 KR20050120277 申请日期 2005.12.09
申请人 NEW POWER PLASMA CO., LTD. 发明人 CHOI, DAI KYU
分类号 H01L21/027;H01L21/324 主分类号 H01L21/027
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