发明名称 |
SUBSTRATE PROCESSING METHOD FOR INCREASED SUBSTRATE THROUGHPUT |
摘要 |
A substrate processing method is provided to restrain the deformation of a substrate by heating uniformly the substrate and to improve the production of substrate by heating quickly the substrate. A substrate is loaded into a process chamber under a loading/unloading pressure condition(S10). The pressure of the process chamber is changed into a base pressure(S14). The pressure of the process chamber is changed into a heating pressure and the substrate is transferred from a loading/unloading position to a substrate processing position. The substrate is heated up to a process temperature(S20). The pressure of the process chamber is changed into a substrate processing pressure(S22). A substrate processing process is performed on the substrate(S24).
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申请公布号 |
KR20070060575(A) |
申请公布日期 |
2007.06.13 |
申请号 |
KR20050120277 |
申请日期 |
2005.12.09 |
申请人 |
NEW POWER PLASMA CO., LTD. |
发明人 |
CHOI, DAI KYU |
分类号 |
H01L21/027;H01L21/324 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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