SILICON WET ETCHING METHOD USING PARYLENE MASK AND METHOD OF MANUFACTURING NOZZLE PLATE OF INKJET PRINTHEAD USING THE WET ETCHING METHOD

摘要

A silicon wet etching method using a parylene mask and a method for manufacturing a nozzle plate of an inkjet printhead using the same are provided to minimize thermal defects inside of a silicon substrate generated by a thermal oxidization process by reducing the number of thermal oxidization processes for the silicon substrate. A silicon wet etching method using a parylene mask includes the steps of forming a first etching mask made of a parylene on a surface of a silicon substrate(200'), forming a first element by primarily wet etching the silicon substrate by using the first etching mask, forming a second etching mask made of a silicon oxidization film on the surface of the silicon substrate, and forming a second element by secondly wet etching the silicon substrate by using the second etching mask, wherein the silicon wet etching method forms at least two elements having a shape different from each other on the silicon substrate by at least two wet etching processes.