| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to prevent crosstalk and to improve sensitivity of the CMOS image sensor by using an insulating spacer and an air gap. Photo diodes(22a,22b) are arranged adjacent to each other on a silicon substrate(21). Inter-metal dielectrics(23,28) are formed on the silicon substrate. First light shield layers(24) of a metal material are formed in the inter-metal dielectrics between neighboring photo diodes. Second light shield layers are formed at both sides of the first light shield layer and in the inter-metal dielectric between the photo diodes. The second light shield layer includes trenches, an insulating spacer(27), and an air gap(29). The trenches are formed at both sides of the first light shield layer and in the inter-metal dielectric between the photo diodes. The insulating spacer is formed on both sidewalls of the trench. The air gap is provided on the trench by the insulating spacer and the inter-metal dielectric.
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