THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

摘要

A thin film transistor array panel and a method for manufacturing the same are provided to form a thin film transistor without adding a mask and performing an ion doping process by securing high field effect mobility and using a bottom gate structure. A gate line is formed on a substrate(110). A polycrystalline semiconductor is formed on the gate line. A data line(171) is formed on the polycrystalline semiconductor. The data line includes a first electrode. A second electrode is formed on the polycrystalline semiconductor and is opposite to the first electrode. A pixel electrode(191) is connected to the second electrode. A plurality of resistant contact members(163,165) are formed between the polycrystalline semiconductor, the first electrode, and the second electrode.