| 摘要 |
A method of manufacturing a semiconductor device is provided to select the material and thickness of a photoresist pattern for a photolithographic process and to reduce the influence of standing wave on the photoresist pattern by controlling a refractive index and absorptance of an upper metal layer using an N compositional rate controlling process on a TiN layer under a predetermined plasma condition. A metal line layer(300) is formed on a semiconductor substrate with a transistor. The metal line layer includes a TiN layer(330) used as an upper metal layer. A plasma treatment is performed on the metal line layer in order to remove N from the TiN layer, so that the compositional rate of N is controlled in the TiN layer. A photoresist pattern is formed on the resultant structure. A metal line is formed by etching selectively the metal line layer.
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