| 摘要 |
An IC(Integrated Circuit) and a method for forming a bonding pad are provided to prevent the crack of the bonding pad and to improve thermal conductivity by using an aluminium capping layer formed on a metallization layer. An IC includes an active circuit element and at least one bonding pad(100). The bonding pad is composed of a metallization layer and a capping layer. The metallization layer is used for contacting electrically at least a portion of the active circuit element. The capping layer is formed on at least a portion of the metallization layer. The capping layer is electrically connected with the metallization layer. The capping layer includes one or more grooves(160). |
