发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device that is high in performance and reliability by connecting a semiconductor chip, an insulation substrate and a heat sink without using a solder. <P>SOLUTION: The outermost surface film 41a of a rear electrode of a semiconductor chip 11 and the outermost surface film 41b of a circuit pattern 15a are made of the same material, and they are faced each other while they are pressurized and vibrated by an ultrasonic frequency. Thus, the same metals formed on the outermost surfaces (boundary) are diffused each other, so that they can be directly connected with each other in a solderless way. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP3928488(B2) 申请公布日期 2007.06.13
申请号 JP20020162594 申请日期 2002.06.04
申请人 发明人
分类号 H01L21/52;H01L29/41;H01L21/60;H01L23/40;H01L29/06;H01L29/78 主分类号 H01L21/52
代理机构 代理人
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