发明名称 METHOD OF ADJUSTING PATTERN DENSITY
摘要 A method for controlling pattern density is provided to secure the stability of processing enough and to enhance a process margin. Reference pattern density is set. A dummy forming region is determined within a vacancy between design patterns(S1). Base dummy patterns are formed at the dummy forming region(S2). Total pattern density is calculated by adding the density of the design patterns to that of the base dummy patterns(S3). The total pattern density approaches the reference pattern density by controlling the size of the base dummy pattern(S5). The data of the controlled dummy pattern are coupled with those of the design pattern(S6). The base dummy patterns are spaced apart from a boundary of the dummy forming region.
申请公布号 KR100730282(B1) 申请公布日期 2007.06.13
申请号 KR20060006882 申请日期 2006.01.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, JAE PIL;YOO, MOON HYUN;LEE, JONG BAE;CHOI, JIN SOOK;PARK, SUNG GYU
分类号 H01L21/027 主分类号 H01L21/027
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