| 摘要 |
A polishing apparatus and a polishing method are provided to obtain a uniform polishing profile and a high removal rate in a CMP process irrespective of the temperature of the polishing surface. A substrate holding unit holds a substrate(W). A polishing table(1) has a polishing surface(8). The substrate holding unit and the polishing table provide relative motion between a surface(9) of the substrate and the polishing surface while the substrate holding unit polishes the surface of the substrate by pressing the surface of the substrate with respect to the polishing surface. A polishing surface temperature control unit(20) controls the temperature of the polishing surface. The polishing surface temperature control unit controls a removal rate of parts of the substrate surface by forming a predetermined temperature distribution on the polishing surface.
|
