| 摘要 |
1,021,783. Semi-conductordevices. RADIO CORPORATION OF AMERICA. Jan. 20, 1964 [Jan. 31, 1963], No. 2480/64. Heading H1K. A crystalline gallium arsenide body has an epitaxial layer, of the same or opposite conductivity type, deposited on a major face which is substantially parallel to a (100) crystallographic plane of the body. The epitaxial layer may be deposited from a melt comprising a solvent metal saturated with gallium arsenide or by passing vapours of gallium chloride, arsenic and hydrogen over the heated body. |
