发明名称 |
AMORPHOUS SILICON THIN-FILM TRANSISTORS AND METHODS OF MAKING THE SAME |
摘要 |
<p>The present invention provides amorphous silicon thin-film transistors and methods of making such transistors for use with active matrix displays. In particular, one aspect of the present invention provides transistors having a structure based on a channel passivated structure wherein the amorphous silicon layer thickness and the channel length can be optimized. In another aspect of the present invention thin-film transistor structures that include a contact enhancement layer that can provide a low threshold voltage are provided.</p> |
申请公布号 |
KR20070061558(A) |
申请公布日期 |
2007.06.13 |
申请号 |
KR20077007603 |
申请日期 |
2005.08.31 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
SARMA KALLURI R.;CHANLEY CHARLES S. |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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