| 摘要 |
A semiconductor device and its manufacturing method are provided to improve voltage-endurance characteristics of an NPN transistor by increasing impurity density of an epitaxial layer of a base region in comparison with impurity density of an epitaxial layer of a lower layer. A device region is defined by separate regions(3,4,5). An NPN transistor is formed on the device region. A P-channel type MOS transistor is formed in another device region. The NPN transistor is formed with a P-type single crystal silicon substrate(6), N-type epitaxial layers(7,8), N-type burial diffusion layers(9,10) used as a collector region, an N-type diffusion layer(11) used as the collector region, a P-type diffusion layer(12) used as a base region, an N-type diffusion layer(13) used as an emitter region, and an N-type diffusion layer(14).
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