| 摘要 |
A method for manufacturing a semiconductor device is provided to acquire a uniform CD(Critical Dimension) from a micro pattern by preventing the generation of non-uniformity on a pattern due to the difference of temperature in a conventional reflow process using a tilt etching process on a hard mask layer. A semiconductor substrate(200) with a lower structure is provided. An interlayer dielectric is formed on the substrate to cover the lower structure. A hard mask layer is formed on the interlayer dielectric. A photoresist pattern for defining a contact hole forming region with a relatively large size compared to that of an aiming contact hole is formed on the hard mask layer. A tilt etching process is performed on the hard mask layer by using the photoresist pattern as an etch mask, so that a hard mask pattern(HM') with a relatively small sized lower portion compared to an upper portion is completed. The photoresist pattern is removed therefrom. A contact hole for exposing the lower structure to the outside is formed through the interlayer dielectric by performing etching using the hard mask pattern as an etch mask.
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