EMBEDDED PHASE-CHANGE MEMORY AND METHOD OF FABRICATION THE SAME

摘要

An embedded phase-change memory and its fabricating method are provided to realize a multifunctional SOC(System-On-Chip) by using a bipolar transistor as a cell transistor. A bipolar transistor, a phase-change memory device, and a MOS transistor are disposed adjacently from each other on a substrate(100). The bipolar transistor, the phase-change memory device, and the MOS transistor are electrically connected to each other. The bipolar transistor includes a base(130) which is formed with SiGe which is disposed on a collector(104). The thickness of the base is 50 to 200 nm. The phase change memory device includes a phase change material layer and a heating layer. An amorphous state and a crystalline state of the phase change material layer are transformed reversibly by current. The heating layer comes in contact with a lower part of the phase change material layer.