| 摘要 |
A dielectric porcelain composition here contains as main components BaO, Nd 2 O 3 , TiO 2 , MgO and SiO 2 at the given ratios and as subordinate components ZnO, B 2 O 3 and CuO at given ratios, so that it can have a low-temperature sintering capability stable and reliable enough to permit a conductor formed of Ag, an alloy containing Ag as a main component or the like to be used as an internal conductor. It is also possible to obtain a dielectric porcelain composition that has limited resonance frequency changes with temperature changes and a specific dielectric constant lower than that of a BaO-rare earth oxide-TiO 2 base dielectric porcelain composition, and so is suitable for multilayer type device formation.
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