METHOD FOR ETCHING MULTI-LAYER OF GROUP III-V SEMICONDUCTOR MATERIALS AND METHOD FOR MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER DEVICE

摘要

A method for etching a multi-layer of group III-V semiconductor materials and a method for manufacturing a vertical cavity surface emitting laser device are provided to obtain clearness and smoothness of an etched surface by etching the multi-layer with plasma of a mixed gas including Cl2, Ar, CH4, and H2. A first semiconductor layer(22) is formed with group III-V semiconductors. A second semiconductor layer(24) is formed with group III-V semiconductors that are different from the group III-V semiconductors of the first semiconductor layer. A method for etching a lamination structure including the first and second semiconductor layers includes a process for etching the lamination structure by exposing the lamination structure to plasma of a mixed gas including Cl2, Ar, CH4, and H2.