发明名称 |
Dynamic random access memory of semiconductor device and method for manufacturing the same |
摘要 |
The present invention discloses an improved DRAM of semiconductor device and method for manufacturing the same wherein an ONO (oxide-nitride-oxide) structure for trapping electrons or holes used in a non-volatile memory is employed in a gate insulating film of the DRAM to reduce impurity concentrations of a channel region and a well region.
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申请公布号 |
US7229881(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20050165180 |
申请日期 |
2005.06.24 |
申请人 |
HYNIX SEMICONDUCTORS, INC. |
发明人 |
LEE SANG DON;KIM YIL WOOK;AHN JIN HONG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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