发明名称 Single-crystal silicon semiconductor structure
摘要 A resistor, a transistor, and a capacitor can be fabricated on a semiconductor wafer in a process that forms an isolated single-crystal region with precise dimensions. The isolated single-crystal region, in turn, defines the body of the resistor, the gate of the transistor, and the top plate of the capacitor.
申请公布号 US7230301(B1) 申请公布日期 2007.06.12
申请号 US20040884910 申请日期 2004.07.06
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 PADMANABHAN GOBI R.;YEGNASHANKARAN VISVAMOHAN
分类号 H01L27/01 主分类号 H01L27/01
代理机构 代理人
主权项
地址