发明名称 |
Method and apparatus for allowing formation of self-aligned base contacts |
摘要 |
A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.
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申请公布号 |
US7229874(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20040778525 |
申请日期 |
2004.02.12 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
HUSSAIN TAHIR;RAJAVEL RAJESH D.;MONTES MARY C. |
分类号 |
H01L21/8249;H01L21/331;H01L21/336;H01L29/417;H01L29/737 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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