发明名称 Method and apparatus for allowing formation of self-aligned base contacts
摘要 A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.
申请公布号 US7229874(B2) 申请公布日期 2007.06.12
申请号 US20040778525 申请日期 2004.02.12
申请人 HRL LABORATORIES, LLC 发明人 HUSSAIN TAHIR;RAJAVEL RAJESH D.;MONTES MARY C.
分类号 H01L21/8249;H01L21/331;H01L21/336;H01L29/417;H01L29/737 主分类号 H01L21/8249
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