发明名称 |
Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors |
摘要 |
A method for manufacturing an integrated circuit 10 having transistors 20, 30 of two threshold voltages where protected transistor stacks 270 have a gate protection layer 220 that are formed with the use of a single additional mask step. Also, an integrated circuit 10 having at least one polysilicon gate transistor 20 and at least one FUSI metal gate transistor 30.
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申请公布号 |
US7229871(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20060553839 |
申请日期 |
2006.10.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YU SHAOFENG;MCKEE BENJAMIN P. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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