| 摘要 |
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a gate structure ( 130 ) over a substrate ( 110 ), the gate structure ( 130 ) having L-shaped sidewall spacers ( 430 ) on opposing sidewalls thereof and placing source/drain implants ( 310 or 510 ) into the substrate ( 110 ) proximate the gate structure ( 130 ). The method for manufacturing the semiconductor device further includes removing at least a portion of a horizontal segment of the L-shaped sidewall spacers ( 430 ).
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