发明名称 |
Phase change memory device and method of manufacture thereof |
摘要 |
A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
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申请公布号 |
US7229883(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20050064132 |
申请日期 |
2005.02.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHAO-HSIUNG;LAI LI-SHYUE;TANG DENNY;LIN WEN-CHIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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