| 摘要 |
A field emission type backlight device can include upper and lower substrates facing each other with a gap between them, an anode electrode on a lower side of the upper substrate, a fluorescent layer on a lower side of the anode electrode, a lower gate electrode on an upper side of the lower substrate, an insulating layer on an upper side of the lower gate electrode, a cathode electrode on an upper side of the insulating layer, and a gate electrode that is provided on an upper side of the insulating layer and electrically connected to the lower gate electrode.
|
